? 2009 ixys corporation, all rights reserved ds100104(01/09) IXFH230N10T n-channel enhancement mode avalanche rated fast intrinsic rectifier symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 230 a i lrms lead current limit, rms 160 a i dm t c = 25 c, pulse width limited by t jm 500 a i a t c = 25 c 115 a e as t c = 25 c 1.5 j p d t c = 25 c 650 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c weight 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 100 v v gs(th) v ds = v gs , i d = 1ma 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 150 c 3 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 notes 1, 2 4.7 m v dss = 100v i d25 = 230a r ds(on) 4.7m g = gate d = drain s = source tab = drain to-247 g d s (tab) features z international standard package z 175c operating temperature z high current handling capability z avalanche rated z fast intrinsic rectifier z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications trench hiperfet tm power mosfet preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXFH230N10T ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 e ? p to-247 (ixfh) outline 1 2 3 terminals: 1 - gate 2 - drain preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 80 135 s c iss 15.3 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1525 pf c rss 195 pf t d(on) 29 ns t r 40 ns t d(off) 45 ns t f 15 ns q g(on) 250 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 70 nc q gd 65 nc r thjc 0.23 c/w r thch 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 230 a i sm repetitive, pulse width limited by t jm 900 a v sd i f = 100a, v gs = 0v, note 1 1.3 v t rr 82 ns i rm 4.8 a q rm 196 nc r esistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 100a r g = 1 (external) i f = 100a, v gs = 0v -di/dt = 100a/ s v r = 50v
? 2009 ixys corporation, all rights reserved IXFH230N10T fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 220 240 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7v 5v 6v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 5v 6v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 180 200 220 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 5 v 6 v fig. 4. r ds(on) normalized to i d = 115a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 230a i d = 115a fig. 5. r ds(on) normalized to i d = 115a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 25 50 75 100 125 150 175 200 225 250 275 300 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXFH230N10T ixys ref: f_230n10t(7v)1-27-09 fig. 7. input admittance 0 40 80 120 160 200 240 280 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 40 80 120 160 200 240 280 0 40 80 120 160 200 240 280 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 175 200 225 250 q g - nanocoulombs v gs - volts v ds = 50v i d = 115a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1.0 10.0 100.0 1,000.0 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 100s 10ms 1ms r ds(on) limit dc 100ms 25s external lead limit
? 2009 ixys corporation, all rights reserved IXFH230N10T fig. 14. resistive turn-on rise time vs. drain current 20 25 30 35 40 45 50 55 60 40 60 80 100 120 140 160 180 200 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? v gs = 10v v ds = 50v fig. 15. resistive turn-on switching times vs. gate resistance 0 50 100 150 200 250 300 350 400 450 500 12345678910 r g - ohms t r - nanoseconds 0 10 20 30 40 50 60 70 80 90 100 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 200a, 100a fig. 16. resistive turn-off switching times vs. junction temperature 12 14 16 18 20 22 24 26 28 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 40 42 44 46 48 50 52 54 56 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 50v i d = 100a i d = 200a fig. 17. resistive turn-off switching times vs. drain current 12 13 14 15 16 17 18 19 20 21 22 23 24 40 60 80 100 120 140 160 180 200 i d - amperes t f - nanoseconds 38 40 42 44 46 48 50 52 54 56 58 60 62 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 50v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 38 39 40 41 42 43 44 45 46 47 48 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? v gs = 10v v ds = 50v i d = 100a i d = 200a fig. 18. resistive turn-off switching times vs. gate resistance 0 40 80 120 160 200 240 280 320 360 400 12345678910 r g - ohms t f - nanoseconds 20 40 60 80 100 120 140 160 180 200 220 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 100a i d = 200a
ixys reserves the right to change limits, test conditions, and dimensions. IXFH230N10T ixys ref: f_230n10t(7v)1-27-09 fig. 19. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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